Graphene nanoribbon field-effect transistors (GNRFETs) have emerged as encouraging replacement candidate for traditional silicon-based transistor in next-generation technology. Since GNRFETs’ channel is about a few nanometers, impact of manufacturing process variations
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Graphene nanoribbon field-effect transistors (GNRFETs) have emerged as encouraging replacement candidate for traditional silicon-based transistor in next-generation technology. Since GNRFETs’ channel is about a few nanometers, impact of manufacturing process variations on circuits’ performance is very large. In this paper, impact of manufacturing process variations such as oxide thickness, channel length, and number of dimer lines on schottky-barrier-type GNRFETs (SB-GNRFETs)-based static flip-flop characteristics such as delay, power, and energy-delay-product (EDP) is evaluated and analyzed. Furthermore, Monte-Carlo (MC) simulations have been performed for statistical analysis of these variations. With change in the oxide thickness from its nominal value to 1.15 nm, the propagation delay and EDP are increased by 31.57% and 60.62%, respectively. Also, the channel length variation has the least effect on flip-flop characteristic. The propagation delay and EDP are increased by 315.48 % and 204.79%, respectively, when the number of dimer lines increases by one from its nominal value. The results obtained from MC simulations show that the oxide thickness variations lead to spread of 2.46, 1.57 and 2.39 times higher than the number of dimer lines variations in histogram distribution of flip-flop characteristic.
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