Improving On-Off Current Ratio (Ion/Ioff) in Schottky-Barrier-Type Graphene Nanoribbon FETs
Subject Areas : electrical and computer engineering1 , Morteza Gholipour 2 * , 3
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2 - Babol Noshirvani University of Technology
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Abstract :
Schottky-barrier-type graphene nanoribbon transistors (SB-GNRFET), despite their prominent characteristics compared to conventional transistors, have a relatively high off-current and a low Ion/Ioff ratio. In this paper, a new structure of SB-GNRFET is presented in which the gate of the transistor is divided into two parts. A constant voltage is connected to the gate located on the drain side, and the gate located on the source side is the main gate of the transistor. The proposed SB-GNRFET is simulated using non-equilibrium Green functions-based numerical simulator under different geometric and physical characteristics and in biases. The simulation results show Ion/Ioff ratio improvement of up to 6.7-fold at VDS = 0.8 V. At this voltage the ratio has increased from 1.2 in the normal SB-GNRFET transistor to 8.01 in the new transistor and the off current has been reduced from 5 µA to 0.7 µA. Also at VDS = 0.6 V, as the supply voltage, the Ion/Ioff ratio increased from 3.97 to 15.8 and the off current decreased from 0.63 µA to 0.16 µA.
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