%0 Journal Article
%A Razavi, S. M., Zahiri, Seyed-Hamid
%T A Novel Source/Drain side Double Recessed Gate 4H-SiC MESFET with n-Buried Layer in the Channel
%J Nashriyyah -i Muhandisi -i Barq va Muhandisi -i Kampyutar -i Iran
%V 15
%N 2
%P 137-142
%D 2017
%R 
%U https://rimag.ir/fa/Article/28248